Defect energy levels in boron-doped silicon irradiated with 1-MeV electrons

Journal Article · Fri Apr 15 04:00:00 EST 1977 · Phys. Rev., B; (United States)

DOI:https://doi.org/10.1103/PhysRevB.15.3836· OSTI ID:7116465

Mooney, P M; Cheng, L J; Sueli, M; Gerson, J D; Corbett, J W

Using transient capacitance spectroscopy, we studied defect energy levels and their annealing behavior in boron-doped silicon of various resistivities irradiated with 1-MeV electrons at room temperature. Three levels located at E/sub v/ + 0.23 eV, E/sub v/ + 0.38 eV, and E/sub c/ - 0.27 eV consistently appear in various samples, showing they are characteristic defects in boron-doped silicon. Many properties of the E/sub v/ + 0.23 eV level and the divacancy are the same, according to the present study and others. We correlated the E/sub v/ + 0.38 eV level to the vacancy-oxygen-carbon complex recently identified by Lee and Corbett using the EPR technique. The E/sub c/ - 0.27 eV level could arise from an interstitial defect of oxygen and boron; and a new level at E/sub v/ + 0.30 eV arising upon its disappearance could be a vacancy defect trapping an oxygen atom and a boron. Several additional defect levels are reported.

• Research Organization: Department of Physics and Institute for the Study of Defects in Solids, State University of New York at Albany, Albany, New York 12222
• OSTI ID: 7116465
• Journal Information: Phys. Rev., B; (United States), Journal Name: Phys. Rev., B; (United States) Vol. 15:8; ISSN PLRBA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360106* -- Metals & Alloys-- Radiation Effects
ANNEALING
COLLISIONS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
ELECTRON COLLISIONS
ELEMENTS
ENERGY RANGE
HEAT TREATMENTS
MEDIUM TEMPERATURE
MEV RANGE
MEV RANGE 01-10
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
SEMIMETALS
SILICON