Defects in neutron-irradiated extrinsic p-type silicon

Conference · Tue Jan 01 04:00:00 EST 1980

OSTI ID:6776902

Young, M H; Stafsudd, O M; Brower, K L; Marsh, O J; Baron, R

From the marked dependence of the observed A/sub 1/ concentration on Group III atom doping, it appears that the defect contains a Group III atom (Ga, In, or Al). It is likely that the Group III atom is complexed with an intrinsic defect such as a vacancy or interstitial complex. The indication that large concentrations of oxygen in the Czochralski-grown samples studied in this work may inhibit the formation of A/sub 1/ defects suggests that the A/sub 1/ defect very well may contain vacancies. Multi-vacancy complexes are observed to form readily in neutron-irradiated silicon in the EPR study. Impurity-vacancy defects have been observed to form at rather elevated anneal temperatures in neutron-irradiated silicon as these vacancy clusters break up, releasing vacancies and divacancies which can then complex with impurity atoms present. The A/sub 1/ defect anneals at a relatively high temperature. A Group III atom-vacancy pair has been observed by EPR techniques, but the energy level associated with this defect has been determined by deep level transient spectroscopy techniques to be a deep level located at E/sub v/ + 0.48 eV. Therefore, the very shallow A/sub 1/ defect cannot be associated with a simple vacancy-impurity atom pair. It is speculated that the A/sub 1/ defect complex may contain more than one single vacancy in its configuration.

• Research Organization: California Univ., Los Angeles (USA). Dept. of Electrical Sciences and Engineering; Sandia Labs., Albuquerque, NM (USA); Hughes Research Labs., Malibu, CA (USA)
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 6776902
• Report Number(s): SAND-80-1503C; CONF-800877-1
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
ALUMINIUM
ANNEALING
BEAMS
COMPLEXES
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
ELECTRON SPIN RESONANCE
ELEMENTS
GALLIUM
HEAT TREATMENTS
IMPURITIES
INDIUM
MAGNETIC RESONANCE
MATERIALS
METALS
NEUTRON BEAMS
NUCLEON BEAMS
P-TYPE CONDUCTORS
PARTICLE BEAMS
PHYSICAL RADIATION EFFECTS
POINT DEFECTS
RADIATION EFFECTS
RESONANCE
SEMICONDUCTOR MATERIALS
SEMIMETALS
SILICON
VACANCIES