Evolution of deep-level centers in {ital p}-type silicon following ion implantation at 85 K
- Department of Materials Science Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States)
- Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States)
{ital In situ} deep-level transient spectroscopy measurements have been carried out on {ital p}-type silicon following MeV He, Si, and Ge ion implantation at 85 K. Deep levels corresponding to intrinsic and impurity-related point defects are only detected after annealing at temperatures above 200 K. In addition to divacancies, interstitial carbon, and a carbon{endash}oxygen complex, the formation of another defect, denoted as K2, has been observed during annealing at 200{endash}230 K in epitaxial wafers, and at 200{endash}300 K in Czochralski grown material. The energy level of the K2 defect is located 0.36 eV above the valence band, which is very close to a previously observed level of the carbon{endash}oxygen pair. The relative concentration of this defect is {approximately}10 times higher in samples implanted with Ge than in those implanted with He. Due to its formation temperature, equal concentration in epitaxial and Czochralski grown wafers, and absence in {ital n}-type samples, the K2 trap has been tentatively identified as a vacancy-related complex which probably contains boron. {copyright} {ital 1999 American Institute of Physics.}
- OSTI ID:
- 321454
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 9 Vol. 74; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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