The effect of impurity content on point defect evolution in ion implanted and electron irradiated Si

Journal Article · Sun Jun 01 04:00:00 EDT 1997 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.118770· OSTI ID:508927

Libertino, S; Benton, J L; Jacobson, D C; Eaglesham, D J; Poate, J M ^[1]; Coffa, S ^[2]; Fuochi, P G; Lavalle, M ^[3]

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1. Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey 07974 (United States)
2. CNR-IMETEM, Stradale Primosole 50, I95121 Catania (Italy)
3. CNR-FRAE, Via P. Gobetti 101, I40129 Bologna (Italy)

We compare the defect complexes generated in crystalline Si by electron irradiation and ion implantation, using irradiation fluences which deposit the same total energy in nuclear collisions. Deep level transient spectroscopy was used to monitor both vacancy-type (e.g., divacancies) and interstitial-type (e.g., carbon{endash}oxygen complexes) defects produced on p-type Si samples. We show that identical defect structures and annealing behavior, T{le}300{degree}C, are produced by both Si implantation and electron irradiation. After annealing at higher temperatures, we observe a higher residual damage in ion implanted samples, which is a direct consequence of the extra incorporated ions. We demonstrate that the substrate impurity content rather than the ion cascade dominates defect formation and evolution. In high purity Si, B-related instead of C-related (e.g., the carbon{endash}oxygen complex) defects preferentially store the interstitials which escape direct recombination with vacancies, and the thermal stability of the C{sub i}O{sub i} complexes is decreased in Si containing low concentration of impurities. {copyright} {ital 1997 American Institute of Physics.}

• OSTI ID: 508927
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 22 Vol. 70; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
BORON
CARBON
CARBON ADDITIONS
CRYSTAL DEFECTS
DEEP LEVEL TRANSIENT SPECTROSCOPY
ELECTRON BEAMS
IMPURITIES
INTERSTITIALS
ION IMPLANTATION
OXYGEN ADDITIONS
POINT DEFECTS
RADIATION EFFECTS
SILICON
VACANCIES