Changes in the electrophysical characteristics of n-type silicon as a result of irradiation with 6. 3 MeV protons

Journal Article · Wed Feb 01 04:00:00 EST 1984 · Sov. Phys. - Semicond. (Engl. Transl.); (United States)

OSTI ID:6830625

Shemaev, B V

An analysis was made of the experimental dose dependences of the changes in the electrical conductivity and Hall mobility of carriers at T = 300 K in samples with different amounts of oxygen and phosphorus. The data for the annealed E centers indicated that an increase in the radiation dose reduced the hole mobility and the band gap of silicon, irrespective of their dependences on the impurity concentration and on the carrier density. On the other hand, the change in the electron mobility was governed by the degree of compensation of the material. It was also established that a reduction in the volume-average density of conduction electrons was due to accumulation of mainly isolated divacancies. The resultant limiting position of the Fermi level approx.E/sub v/+0.4 eV corresponded to the presence of a donor level E/sub v/+0.27 eV and a lower acceptor level E/sub c/-0.54 eV of a divacancy. An analysis of the experimental data obtained before annealing of the radiation defects indicated the presence not only of divacancies, but also of weakly separated (from divacancies) intrinsic interstitial defects which were annealed at temperatures T< or approx. =400 K and had deep acceptor and donor levels.

• Research Organization: Scientific-Research Institute of Nuclear Physics at the M. V. Lomonosov State University, Moscow
• OSTI ID: 6830625
• Journal Information: Sov. Phys. - Semicond. (Engl. Transl.); (United States), Journal Name: Sov. Phys. - Semicond. (Engl. Transl.); (United States) Vol. 18:2; ISSN SPSEA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603 -- Materials-- Properties
360605* -- Materials-- Radiation Effects
ALLOYS
ANNEALING
BARYONS
COLOR CENTERS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DOSE RATES
E CENTERS
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELECTRON MOBILITY
ELEMENTARY PARTICLES
ELEMENTS
ENERGY GAP
ENERGY LEVELS
ENERGY RANGE
FERMI LEVEL
FERMIONS
HADRONS
HALL EFFECT
HEAT TREATMENTS
HOLE MOBILITY
MATERIALS
MEDIUM TEMPERATURE
MEV RANGE
MEV RANGE 01-10
MOBILITY
N-TYPE CONDUCTORS
NUCLEONS
OXYGEN ADDITIONS
PARTICLE MOBILITY
PHOSPHORUS ADDITIONS
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
POINT DEFECTS
PROTONS
RADIATION EFFECTS
SEMICONDUCTOR MATERIALS
SEMIMETALS
SILICON
VACANCIES
VARIATIONS