Positions of acceptor levels of a divacancy in the band gap of n-type silicon irradiated with 6. 3 MeV protons

Journal Article · Tue Nov 01 04:00:00 EST 1983 · Sov. Phys. - Semicond. (Engl. Transl.); (United States)

OSTI ID:5055638

Shemaev, B V

An analysis was made of changes in the temperature dependences of the Hall coefficient caused by irradiation of n-type silicon with 6.3 MeV protons and by isochronous annealing. The results indicated that primary divacancies created at a high rate had acceptor levels at E/sub c/-0.54 and E/sub c/-0.42 eV, corresponding to the conversion of divacancies from the neutral to the singly and doubly charged states. Intrinsic defects with an acceptor level at approx.E/sub c/-0.4 eV, annealed at temperatures up to T = 400 K, were introduced simultaneously with divacancies; these defects were identified as the Si-P6 centers.

• Research Organization: Scientific-Research Institute of Nuclear Physics at the M. V. Lomonosov State University, Moscow
• OSTI ID: 5055638
• Journal Information: Sov. Phys. - Semicond. (Engl. Transl.); (United States), Journal Name: Sov. Phys. - Semicond. (Engl. Transl.); (United States) Vol. 17:11; ISSN SPSEA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
ANNEALING
BARYONS
CHARGE STATE
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
ELEMENTARY PARTICLES
ELEMENTS
ENERGY GAP
ENERGY RANGE
FERMIONS
HADRONS
HALL EFFECT
HEAT TREATMENTS
HIGH TEMPERATURE
MATERIALS
MEV RANGE
MEV RANGE 01-10
N-TYPE CONDUCTORS
NUCLEONS
PHYSICAL RADIATION EFFECTS
POINT DEFECTS
PROTONS
RADIATION EFFECTS
SEMICONDUCTOR MATERIALS
SEMIMETALS
SILICON
TEMPERATURE DEPENDENCE
VACANCIES