Divacancy-iron complexes in silicon

Journal Article · Mon Jan 28 04:00:00 EST 2013 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4788695· OSTI ID:22102247

Tang, C. K.; Vines, L.; Svensson, B. G.; Monakhov, E. V. ^[1]; Markevich, V. P. ^[2]

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1. Physics Department/Center for Materials Science and Nanotechnology, University of Oslo, P.O. Box 1048 Blindern, N-0316 Oslo (Norway)
2. School of Electrical and Electronic Engineering, Photon Science Institute, University of Manchester, Manchester M13 9PL, Lancs (United Kingdom)

Iron and irradiation-induced defects have been investigated in p-type float-zone silicon after MeV electron-irradiation using deep level transient spectroscopy. Isochronal annealing (30 min) was performed up to 250 {sup Degree-Sign }C, and three distinctive energy levels are observed in the Fe-contaminated samples with positions of 0.25, 0.29, and 0.34 eV above the valence band edge, respectively. The two latter ones are found to accompany the change in concentration of the divacancy center (V{sub 2}) during the isochronal annealing which strongly indicates an interaction between Fe and V{sub 2}. Furthermore, the properties of the defects support recent theoretical predictions of FeV{sub 2} and VFeV (Estreicher et al., Phys. Rev. B 77, 125214 (2008)).

• OSTI ID: 22102247
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 4 Vol. 113; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANNEALING
CRYSTAL DEFECTS
CRYSTALS
DEEP LEVEL TRANSIENT SPECTROSCOPY
ELECTRON BEAMS
ELECTRONS
ENERGY LEVELS
IRON
IRRADIATION
MEV RANGE 01-10
P-TYPE CONDUCTORS
SEMICONDUCTOR MATERIALS
SILICON
VACANCIES