Kinetics of divacancy annealing and divacancy-oxygen formation in oxygen-enriched high-purity silicon

Journal Article · Tue Nov 15 04:00:00 EST 2005 · Physical Review. B, Condensed Matter and Materials Physics

DOI:https://doi.org/10.1103/PhysRevB.72.195207· OSTI ID:20719827

Mikelsen, M; Monakhov, E V; Alfieri, G; Svensson, B G ^[1]; Avset, B S ^[2]

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1. Department of Physics, Physical Electronics, University of Oslo, P.O. Box 1048, Blindern, N-0316 Oslo (Norway)
2. SINTEF ICT, P.O. Box 124 Blindern, N-0314 Oslo (Norway)

In this work the thermal kinetics of the transformation from the divacancy (V{sub 2}) to the divacancy-oxygen (V{sub 2}O) complex has been studied in detail, and activation energies (E{sub a}), have been obtained. Diffusion oxygenated float-zone silicon (DOFZ-Si) samples of n-type with a doping of 5x10{sup 12} cm{sup -3} and oxygen content of (2-3)x10{sup 17} cm{sup -3} have been irradiated with 15 MeV electrons. Isothermal annealing studies of electrically active defects have been performed by means of deep-level transient spectroscopy. Heat treatments at temperatures in the range 205 deg. C-285 deg. C have all shown a shift in the singly negative and doubly negative divacancy levels, due to the annealing of V{sub 2} and the formation of V{sub 2}O. By studying the temperature-dependent rate of this process which exhibits first order kinetics, it has been found that both the annealing V{sub 2} and the formation of V{sub 2}O have activation energies of {approx_equal}1.3 eV. This value is ascribed to migration of V{sub 2}, and the results favor strongly a model where V{sub 2} is trapped by interstitial oxygen atoms during migration. In addition, the process takes place with a high efficiency since the loss of V{sub 2} and the growth of V{sub 2}O display a close one-to-one proportionality. Finally, it has been found that the diffusivity pre-exponential factor, D{sub V{sub 2}}{sup 0}, for V{sub 2} is in the range 3{+-}1.5x10{sup -3} cm{sup 2}/s, which agrees well with a simple theoretical model of V{sub 2} diffusion in Si.

• OSTI ID: 20719827
• Journal Information: Physical Review. B, Condensed Matter and Materials Physics, Journal Name: Physical Review. B, Condensed Matter and Materials Physics Journal Issue: 19 Vol. 72; ISSN 1098-0121
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ACTIVATION ENERGY
ANNEALING
CRYSTALS
DEEP LEVEL TRANSIENT SPECTROSCOPY
DIFFUSION
EFFICIENCY
ELECTRON BEAMS
ELECTRONS
INTERSTITIALS
IRRADIATION
MEV RANGE
OXYGEN
PHYSICAL RADIATION EFFECTS
SEMICONDUCTOR MATERIALS
SILICON
TEMPERATURE DEPENDENCE
TRAPPING
VACANCIES