Annealing of the divacancy-oxygen and vacancy-oxygen complexes in silicon
- Department of Physics, Physical Electronics, University of Oslo, P.O. Box 1048, Blindern, N-0316 Oslo (Norway)
After low dose electron irradiation, annealing kinetics of divacancy-oxygen (V{sub 2}O) and vacancy-oxygen (VO) complexes in carbon-lean n-type magnetic Czochralski (MCZ) and diffusion-oxygenated float-zone (DOFZ) Si samples has been studied in detail. The samples were of n type with a phosphorus doping concentration in the 10{sup 12} cm{sup -3} range, and the analysis was conducted by means of deep-level transient spectroscopy (DLTS). An exponential decrease in the V{sub 2}O concentration with time during isothermal annealing at temperatures in the range 275-355 deg. C has been observed. The activation energy for the V{sub 2}O annealing is found to be 2.02{+-}0.12 eV, with a preexponential factor in the 10{sup 13} s{sup -1} range, which strongly suggests that dissociation of V{sub 2}O is the dominating mechanism. The binding energy of the vacancy to the V{sub 2}O complex has been estimated as {approx}1.7 eV. An increase in the VO concentration is observed in the initial phase of the V{sub 2}O annealing, which is supportive of V{sub 2}O dissociation through the reaction V{sub 2}O{yields}VO+V. After the initial increase, a close to first order decrease in the VO concentration is observed, consistent with that VO mainly anneals by migration and trapping at oxygen interstitial sites, similarly to what has been reported in previous high-dose studies using infrared spectroscopy. The vacancy-oxygen-hydrogen complex (VOH) is formed after long time annealing. The formation of VOH is followed by a decrease at the same rate as VO, and it is suggested that VOH dissociates (VOH{yields}VO+H). The experimental data have been compared with kinetic simulations and show good agreement with a model where the main processes are dissociation of VO and V{sub 2}O, migration and subsequent trapping of VO ultimately giving rise to the electrically inactive vacancy-dioxygen pair (VO{sub 2}) and interactions involving atomic hydrogen.
- OSTI ID:
- 20957809
- Journal Information:
- Physical Review. B, Condensed Matter and Materials Physics, Journal Name: Physical Review. B, Condensed Matter and Materials Physics Journal Issue: 15 Vol. 75; ISSN 1098-0121
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
ABSORPTION SPECTROSCOPY
ACTIVATION ENERGY
ANNEALING
BINDING ENERGY
CARBON
DEEP LEVEL TRANSIENT SPECTROSCOPY
DISSOCIATION
ELECTRONS
EV RANGE 01-10
HYDROGEN
HYDROGEN COMPLEXES
INFRARED SPECTRA
INTERSTITIALS
OXYGEN
OXYGEN COMPLEXES
PHOSPHORUS
SEMICONDUCTOR MATERIALS
SILICON
VACANCIES
VANADIUM OXIDES