Rapid annealing of the vacancy-oxygen center and the divacancy center by diffusing hydrogen in silicon
- Department of Physics, Physical Electronics, University of Oslo, P.O. Box 1048 Blindern, N-0316 Oslo (Norway)
- Institute for Experimental Physics, Hamburg University, D-22761 Hamburg, Germany and National Institute of Materials Physics, Bucharest-Magurele 077125 (Romania)
- Microsystems and Nanotechnology, SINTEF ICT, P.O. Box 124 Blindern, N-0314 Oslo (Norway)
In hydrogenated high-purity Si, the vacancy-oxygen (VO) center is shown to anneal already at temperatures below 200 deg. C and is replaced by a center, identified as a vacancy-oxygen-hydrogen complex, with an energy level 0.37 eV below the conduction-band edge and a rather low thermal stability. At long annealing times, the process is reversed and the concentration of the latter defect is reduced, while the VO center partly recovers. The divacancy (V{sub 2}) center anneals in parallel with the initial annealing of the VO center, and the loss in V{sub 2} exhibits a one-to-one proportionality with the appearance of a hole trap 0.23 eV above the valence-band edge attributed to a divacancy-hydrogen (V{sub 2}H) center.
- OSTI ID:
- 21143085
- Journal Information:
- Physical Review. B, Condensed Matter and Materials Physics, Journal Name: Physical Review. B, Condensed Matter and Materials Physics Journal Issue: 7 Vol. 77; ISSN 1098-0121
- Country of Publication:
- United States
- Language:
- English
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