Room-temperature annealing of vacancy-type defect in high-purity n-type Si

Journal Article · Sat Dec 15 04:00:00 EST 2007 · Physical Review. B, Condensed Matter and Materials Physics

DOI:https://doi.org/10.1103/PHYSREVB.76.233204· OSTI ID:21052823

Bleka, J H; Monakhov, E V; Svensson, B G; Avset, B S ^[1]

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1. Department of Physics, Physical Electronics, University of Oslo, P.O. Box 1048 Blindern, N-0316 Oslo (Norway)

Electron-irradiated p{sup +}-n{sup -}-n{sup +} diodes produced from low-doped high-purity Si wafers were found, by deep-level transient spectroscopy (DLTS), to have a prominent defect, labeled E4, with an energy level 0.37 eV below the conduction-band edge and a concentration of {approx}(1/4) relative to the divacancy. The samples were kept at room temperature, and the E4 concentration was seen to reduce to half during five weeks. Annealing data revealed a similar peak E5 overlapping that of the single-negatively charged divacancy and showing a one-to-one proportionality with E4. E4 and E5 arise most likely from a vacancy-type defect and a tentative assignment to a planar tetravacancy is put forward.

• OSTI ID: 21052823
• Journal Information: Physical Review. B, Condensed Matter and Materials Physics, Journal Name: Physical Review. B, Condensed Matter and Materials Physics Journal Issue: 23 Vol. 76; ISSN 1098-0121
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANNEALING
CRYSTALS
DEEP LEVEL TRANSIENT SPECTROSCOPY
DEFECTS
DOPED MATERIALS
ELECTRON BEAMS
ELECTRONS
ENERGY LEVELS
EV RANGE
IMPURITIES
IRRADIATION
SEMICONDUCTOR DIODES
SEMICONDUCTOR MATERIALS
SILICON
TEMPERATURE RANGE 0273-0400 K
VACANCIES