Study of irradiation-induced defects in germanium

Journal Article · Tue Mar 01 04:00:00 EST 1988 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.339939· OSTI ID:5372892

Nagesh, V; Farmer, J W

Radiation-induced defects in germanium were studied using deep-level transient spectroscopy and stress transient spectroscopy. Four electron traps have been identified: the planar four vacancy at E/sub c/ -0.09 eV, the divacancy at E/sub c/ -0.17 eV, the vacancy-oxygen pair at E/sub c/ -0.27 eV, and the donor-vacancy pair level at E/sub c/ -0.35 eV.

• Research Organization: University of Missouri, Research Reactor, Columbia, Missouri 65211
• OSTI ID: 5372892
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 63:5; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
BARYONS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DEEP LEVEL TRANSIENT SPECTROSCOPY
ELECTROMAGNETIC RADIATION
ELEMENTARY PARTICLES
ELEMENTS
FERMIONS
GAMMA RADIATION
GERMANIUM
HADRONS
IONIZING RADIATIONS
METALS
NEUTRONS
NUCLEONS
PHYSICAL RADIATION EFFECTS
POINT DEFECTS
RADIATION EFFECTS
RADIATIONS
SPECTROSCOPY
TRAPS
VACANCIES