Defect states in ZnSe single crystals irradiated with gamma rays

Journal Article · Mon Dec 31 23:00:00 EST 1990 · Journal of Applied Physics; (USA)

DOI:https://doi.org/10.1063/1.347711· OSTI ID:5997069

Karai, M; Kido, K; Naito, H; Kurosawa, K; Okuda, M ^[1]; Fujino, T; Kitagawa, M ^[2]

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1. Department of Electronics, University of Osaka Prefecture, 4-804 Mozu-Umemachi, Sakai, Osaka 591, Japan (JP)
2. Research Institute, University of Osaka Prefecture, Sinke-cho, Sakai, Osaka 593, (Japan)

Defect states in ZnSe single crystals induced by {sup 60}Co {gamma}-ray irradiation have been investigated with deep-level transient spectroscopy (DLTS) and optical deep-level transient spectroscopy (ODLTS). 5-MeV-electron-irradiated crystals have also been examined for comparison. With DLTS measurements it is found that two electron traps at {ital E}{sub {ital c}} {minus} 0.27 eV and {ital E}{sub {ital c}} {minus} 0.49 eV are newly introduced, and the concentration of an electron trap at {ital E}{sub {ital c}} {minus} 0.30 eV, which exists in unirradiated ZnSe, is increased by {gamma}-ray or electron irradiation. Two additional electron traps located at {ital E}{sub {ital c}} {minus} 0.15 eV and {ital E}{sub {ital c}} {minus} 0.79 eV are also observed, and are unique to the {gamma}-ray and the 5-MeV-electron-irradiated material, respectively. In ODLTS spectra a newly introduced hole trap at {ital E}{sub {ital v}}+0.71 eV and the increase in the concentration of a trap at {ital E}{sub {ital v}}+0.19 eV are observed in the ZnSe irradiated with {gamma} ray or 5 MeV electron. It is concluded that the electron trap at {ital E}{sub {ital c}}{minus}0.30 eV and the hole trap at {ital E}{sub {ital v}}+0.71 eV are attributed to a Se and Zn vacancy-associated defect in the ZnSe single crystal, respectively. The hole trap at {ital E}{sub {ital v}} +0.19 eV is tentatively identified as arising from an impurity Se vacancy complex.

• OSTI ID: 5997069
• Journal Information: Journal of Applied Physics; (USA), Journal Name: Journal of Applied Physics; (USA) Vol. 69:1; ISSN 0021-8979; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
CHALCOGENIDES
COLLISIONS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
CRYSTALS
ELECTROMAGNETIC RADIATION
ELECTRON COLLISIONS
ENERGY RANGE
GAMMA RADIATION
IONIZING RADIATIONS
MEV RANGE
MEV RANGE 01-10
MONOCRYSTALS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATIONS
SELENIDES
SELENIUM COMPOUNDS
TRAPS
ZINC COMPOUNDS
ZINC SELENIDES