Study of grown-in and radiation-induced defects in indium phosphide
This research is focused on (1) conducting detailed theoretical and experimental study of grown-in and radiation-induced defects in liquid encapsulated Czohralski (LEC) grown, Zn-doped P-type indium phosphide (InP), (2) identifying the physical origin of the defects detected using Deep Level Transient Spectroscopy (DLTS) method, and (3) and developing a second-order model to interpret the presence of nonexponential capacitance transients in DLTS method. Analysis of grown-in and radiation-induced defects in P-type InP is undertaken. The main research results are summarized as follows: (1) DLTS analysis of grown-in defects in liquid LEC-grown, Zn-doped, P-type InP is made in this study. A single-hole trap of E/sub v/ + 0.52 eV is detected with a trap density of 1.8 x 10/sup 15/ cm/sup -3/. The physical origin of this hole trap is attributed to a phosphorus vacancy or phosphorus interstitial-related defect. (2) One-MeV electron-irradiated P-type InP introduced two new hole traps, namely E/sub v/ + 0.34 and E/sub v/ + 0.58 eV with introduction rates (dN/sub T/d phi) of 0.4 and 1.2 per electron-cm, respectively. (3) A theoretical model is developed to interpret nonexponential capacitance transients in a deep-level transient spectroscopy method when the capture process competes with the dominant thermal-emission process.
- Research Organization:
- Florida Univ., Gainesville (USA)
- OSTI ID:
- 5977455
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360605* -- Materials-- Radiation Effects
BEAMS
CRYSTAL DEFECTS
CRYSTAL GROWTH METHODS
CRYSTAL STRUCTURE
CZOCHRALSKI METHOD
ELECTRON BEAMS
ENERGY RANGE
HOLES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
LEPTON BEAMS
MEV RANGE
PARTICLE BEAMS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHYSICAL RADIATION EFFECTS
PNICTIDES
RADIATION EFFECTS
TRAPS