Shallow and deep level defects in GaN
- Xerox Palo Alto Research Center, CA (United States)
- Hewlett Packard Co., San Jose, CA (United States)
Shallow and deep electronic defects in MOCVD-grown GaN were characterized by variable temperature Hall effect measurements, deep level transient spectroscopy (DLTS) and photoemission capacitance transient spectroscopy (O-DLTS). Unintentionally and Si-doped, n-type and Mg-doped, p-type GaN films were studied. Si introduces a shallow donor level into the band gap of GaN at {approximately} E{sub c} {minus} 0.02 eV and was found to be the dominant donor impurity in the unintentionally doped material. Mg is the shallowest acceptor in GaN identified to date with an electronic level at {approximately} E{sub v} + 0.2 eV. With DLTS deep levels were detected in n-type and p-type GaN and with O-DLTS the authors demonstrate several deep levels with optical threshold energies for electron photoemission in the range between 0.87 and 1.59 eV in n-type GaN.
- OSTI ID:
- 394988
- Report Number(s):
- CONF-951155--; ISBN 1-55899-298-7
- Country of Publication:
- United States
- Language:
- English
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