Shallow dopants and the role of hydrogen in epitaxial layers of gallium nitride (GaN)
- Xerox Palo Alto Research Center, CA (United States)
- Hewlett Packard Co., San Jose, CA (United States)
Shallow donors and acceptors were characterized by photoluminescence spectroscopy and variable temperature Hall effect measurements for Si-doped and Mg-doped GaN epitaxial layers, respectively, grown by metalorganic chemical vapor deposition. Si doping introduces a donor state located {approximately} 23 meV below the conduction band minimum. Results from secondary ion mass spectroscopy confirm that the shallow donor level in the unintentionally doped GaN as well as in Si-doped GaN is due to Si. The electrical and photoluminescence properties of Mg-doped GaN are dominated by an acceptor level located {approximately} 0.2 eV above the valence band edge which results from Mg atoms substituting for Ga. Hydrogen is implicated in the low doping efficiency of acceptors in as-grown Mg-doped GaN by results from remote-plasma hydrogenation and acceptor activation experiments. The activation of acceptors in Mg-doped GaN is consistent with the dissociation of electrically inactive acceptor-hydrogen complexes rather than the removal of compensating donors. 23 refs., 4 figs., 2 tabs.
- OSTI ID:
- 417636
- Report Number(s):
- CONF-960502--; ISBN 1-56677-163-3
- Country of Publication:
- United States
- Language:
- English
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