Correlation of a generation-recombination center with a deep level trap in GaN
- Institute of Materials Research and Engineering, 3, Research Link, Singapore 117602 (Singapore)
- Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States)
- Materials Department, University of California, Santa Barbara, California 93106-5050 (United States)
- Low energy electronic system IRG, Singapore MIT Alliance for Research and Technology Center, 1 CREATE way, Singapore 138602 (Singapore)
We report on the identification of a deep level trap centre which contributes to generation-recombination noise. A n-GaN epilayer, grown by MOCVD on sapphire, was measured by deep level transient spectroscopy (DLTS) and noise spectroscopy. DLTS found 3 well documented deep levels at E{sub c} − 0.26 eV, E{sub c} − 0.59 eV, and E{sub c} − 0.71 eV. The noise spectroscopy identified a generation recombination centre at E{sub c} − 0.65 ± 0.1 eV with a recombination lifetime of 65 μs at 300 K. This level is considered to be the same as the one at E{sub c} − 0.59 eV measured from DLTS, as they have similar trap densities and capture cross section. This result shows that some deep levels contribute to noise generation in GaN materials.
- OSTI ID:
- 22395705
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 10 Vol. 106; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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