A spin dependent recombination study of radiation induced defects at and near the Si/SiO sub 2 interface

Conference · Fri Dec 01 00:00:00 EST 1989 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA)

OSTI ID:7198830

Jupina, M A; Lenahan, P M ^[1]

---

1. Pennsylvania State Univ., University Park, PA (US)

A new electron spin resonance technique, spin dependent recombination (SDR) permits extremely rapid, high signal to noise ratio electron spin resonance (ESR) measurements of electrically active radiation damage centers in (relatively) hard MOS transistors in integrated circuits. Using SDR the authors observe the radiation induced buildup of Pbo and E' centers at relatively low concentration in individual MOSFETs in integrated circuits with (100) silicon surface orientation. Earlier ESR studies of extremely large ({approximately}1 cm{sup 2}) capacitor structures have identified Pb and E' centers as the dominant radiation induced defects in MOS devices. The authors discuss how their results extend and confirm these earlier results and at least qualitatively answer objections to the earlier work related to the relevance of large capacitor studies to transistors in an integrated circuit.

• OSTI ID: 7198830
• Report Number(s): CONF-890723-; CODEN: IETNA; CNN: DNA002-86-0055; TRN: 90-014121
• Journal Information: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA), Vol. 36:6; Conference: 26. annual conference on nuclear and space radiation effects, Marco Island, FL (USA), 25-29 Jul 1989; ISSN 0018-9499
• Country of Publication: United States
• Language: English

Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
INTERFACES
HOLE MOBILITY
MOSFET
RADIATION HARDENING
CAPACITORS
DESIGN
ELECTRON SPIN RESONANCE
INTEGRATED CIRCUITS
QUALITY ASSURANCE
RECOMBINATION
SEMICONDUCTOR JUNCTIONS
SIGNAL-TO-NOISE RATIO
SILICON OXIDES
CHALCOGENIDES
ELECTRICAL EQUIPMENT
ELECTRONIC CIRCUITS
EQUIPMENT
FIELD EFFECT TRANSISTORS
HARDENING
JUNCTIONS
MAGNETIC RESONANCE
MICROELECTRONIC CIRCUITS
MOBILITY
MOS TRANSISTORS
OXIDES
OXYGEN COMPOUNDS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RESONANCE
SEMICONDUCTOR DEVICES
SILICON COMPOUNDS
TRANSISTORS
440200* - Radiation Effects on Instrument Components
Instruments
or Electronic Systems
360605 - Materials- Radiation Effects
656002 - Condensed Matter Physics- General Techniques in Condensed Matter- (1987-)