Spin dependent recombination; A sup 29 Si hyperfine study of radiation-induced P sub b centers at the Si/SiO sub 2 interface

Conference · Sat Dec 01 00:00:00 EST 1990 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA)

OSTI ID:5933526

Jupina, M A; Lenahan, P M ^[1]

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1. Pennsylvania State Univ., PA (US)

The spin dependent recombination (SDR) technique is used to observe the {sup 29}Si hyperfine spectra of radiation-induced P{sub b} centers at the Si/SiO{sub 2} interface in a MOSFET. The P{sub b} center is a paramagnetic, trivalent silicon defect that is the dominant radiation-induced interface state. The {sup 29}Si hyperfine spectra give detailed atomic scale information about the P{sub b} center. The authors' SDR results show that the {sup 29}Si hyperfine spectra vary with surface potential. This result indicates that differences in the defect's local geometry lead to substantial differences in the defect's energy level. However, the {sup 29}Si hyperfine spectra are found to be relatively independent of the ionizing radiation dosage.

• OSTI ID: 5933526
• Report Number(s): CONF-900723-; CODEN: IETNA; TRN: 91-014914
• Journal Information: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA), Vol. 37:6; Conference: 27. IEEE annual conference on nuclear and space radiation effects, Reno, NV (USA), 16-20 Jul 1990; ISSN 0018-9499
• Country of Publication: United States
• Language: English

Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
42 ENGINEERING
MOSFET
PHYSICAL RADIATION EFFECTS
SILICA
SILICON
CRYSTAL DEFECTS
DOSE RATES
ELECTRON SPIN RESONANCE
INTERFACES
IONIZATION
PARAMAGNETISM
RECOMBINATION
SILICON 29
SPIN
SURFACE POTENTIAL
ANGULAR MOMENTUM
CHALCOGENIDES
CRYSTAL STRUCTURE
ELEMENTS
EVEN-ODD NUCLEI
FIELD EFFECT TRANSISTORS
ISOTOPES
LIGHT NUCLEI
MAGNETIC RESONANCE
MAGNETISM
MINERALS
MOS TRANSISTORS
NUCLEI
OXIDE MINERALS
OXIDES
OXYGEN COMPOUNDS
PARTICLE PROPERTIES
POTENTIALS
RADIATION EFFECTS
RESONANCE
SEMICONDUCTOR DEVICES
SEMIMETALS
SILICON COMPOUNDS
SILICON ISOTOPES
SILICON OXIDES
STABLE ISOTOPES
TRANSISTORS
440200* - Radiation Effects on Instrument Components
Instruments
or Electronic Systems
426000 - Engineering- Components
Electron Devices & Circuits- (1990-)