Dose dependence of interface traps in gate oxides at high levels of total dose

Conference · Fri Dec 01 00:00:00 EST 1989 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA)

OSTI ID:7198761

Baze, M P; Plaag, R E; Johnston, A H ^[1]

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1. High Technology Center, Boeing Aerospace and Electronics, Seattle, WA (US)

Interface traps in gate oxides were found to saturate at high total dose levels. An empirical model was developed to describe the nonlinear dependence and saturation characteristics. Three different processes were studied including CMOS/SOS, hardened bulk CMOS and unhardened bulk CMOS using several combinations of dose rate and bias. An evaluation was made of the model's accuracy in extrapolating the effect of interface traps to very high doses. A possible application of the model in characterizing devices for space environments is discussed along with implications for a physical model of radiation induced interface trap buildup.

• OSTI ID: 7198761
• Report Number(s): CONF-890723-; CODEN: IETNA; TRN: 90-014151
• Journal Information: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA), Vol. 36:6; Conference: 26. annual conference on nuclear and space radiation effects, Marco Island, FL (USA), 25-29 Jul 1989; ISSN 0018-9499
• Country of Publication: United States
• Language: English

Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
99 GENERAL AND MISCELLANEOUS//MATHEMATICS, COMPUTING, AND INFORMATION SCIENCE
36 MATERIALS SCIENCE
MOS TRANSISTORS
RADIATION HARDENING
ENVIRONMENTAL IMPACTS
EXTRAPOLATION
HOLE MOBILITY
INTERFACES
IRRADIATION
NONLINEAR PROBLEMS
SPACE VEHICLE COMPONENTS
TRAPPING
HARDENING
MOBILITY
NUMERICAL SOLUTION
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
TRANSISTORS
440200* - Radiation Effects on Instrument Components
Instruments
or Electronic Systems
990200 - Mathematics & Computers
360605 - Materials- Radiation Effects