Dose dependence of interface traps in gate oxides at high levels of total dose

Conference · Thu Nov 30 23:00:00 EST 1989 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA)

OSTI ID:7198761

Baze, M P; Plaag, R E; Johnston, A H ^[1]

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1. High Technology Center, Boeing Aerospace and Electronics, Seattle, WA (US)

Interface traps in gate oxides were found to saturate at high total dose levels. An empirical model was developed to describe the nonlinear dependence and saturation characteristics. Three different processes were studied including CMOS/SOS, hardened bulk CMOS and unhardened bulk CMOS using several combinations of dose rate and bias. An evaluation was made of the model's accuracy in extrapolating the effect of interface traps to very high doses. A possible application of the model in characterizing devices for space environments is discussed along with implications for a physical model of radiation induced interface trap buildup.

• OSTI ID: 7198761
• Report Number(s): CONF-890723--
• Journal Information: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA), Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA) Vol. 36:6; ISSN 0018-9499; ISSN IETNA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605 -- Materials-- Radiation Effects
440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
99 GENERAL AND MISCELLANEOUS
990200 -- Mathematics & Computers
ENVIRONMENTAL IMPACTS
EXTRAPOLATION
HARDENING
HOLE MOBILITY
INTERFACES
IRRADIATION
MOBILITY
MOS TRANSISTORS
NONLINEAR PROBLEMS
NUMERICAL SOLUTION
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATION HARDENING
SEMICONDUCTOR DEVICES
SPACE VEHICLE COMPONENTS
TRANSISTORS
TRAPPING