Dose and energy dependence of interface trap formation in cobalt-60 and x-ray environments
The radiation induced buildup of interface traps is examined on radiation hardened 20-nm gate oxide n-channel transistors irradiated with /sup 60/Co and 10 keV x-rays. A variation in the functional dependence of ..delta..D/sub it/ growth on dose from linear with dose to a square root dependence was observed. The samples with the largest low dose interface trap buildup showed the slowest rate of growth (D/sup 1/2/) while the samples with the smallest low dose ..delta..D/sub it/ show the fastest buildup (linear with dose). The authors offer a possible qualitative explanation of this behavior based on cluster centers. The interface trap density growth was also observed to tend toward saturation at doses above 3 Mrad(SiO/sub 2/). A photon energy dependence of D/sub it/ formation between /sup 60/Co and x-ray irradiation was not observed.
- Research Organization:
- Harry Diamond Labs., Adelphi, MD (US)
- OSTI ID:
- 6065330
- Report Number(s):
- CONF-880730-
- Journal Information:
- IEEE Trans. Nucl. Sci.; (United States), Vol. 35:6; Conference: 25. annual conference on nuclear and space radiation effects, Portland, OR, USA, 12 Jul 1988
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
JUNCTION TRANSISTORS
IRRADIATION
RADIATION HARDENING
ENERGY DEPENDENCE
TRAPS
RADIOINDUCTION
COBALT 60
DOSE-RESPONSE RELATIONSHIPS
ENVIRONMENTAL EFFECTS
GATING CIRCUITS
INTERFACES
OXIDES
PHOTONS
RADIATION TRANSPORT
TRAPPING
X RADIATION
BETA DECAY RADIOISOTOPES
BETA-MINUS DECAY RADIOISOTOPES
CHALCOGENIDES
COBALT ISOTOPES
ELECTROMAGNETIC RADIATION
ELECTRONIC CIRCUITS
ELEMENTARY PARTICLES
HARDENING
INTERMEDIATE MASS NUCLEI
INTERNAL CONVERSION RADIOISOTOPES
IONIZING RADIATIONS
ISOMERIC TRANSITION ISOTOPES
ISOTOPES
MASSLESS PARTICLES
MINUTES LIVING RADIOISOTOPES
NUCLEI
ODD-ODD NUCLEI
OXYGEN COMPOUNDS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATIONS
RADIOISOTOPES
SEMICONDUCTOR DEVICES
TRANSISTORS
YEARS LIVING RADIOISOTOPES
654001* - Radiation & Shielding Physics- Radiation Physics
Shielding Calculations & Experiments
440200 - Radiation Effects on Instrument Components
Instruments
or Electronic Systems