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Dose and energy dependence of interface trap formation in cobalt-60 and x-ray environments

Conference · · IEEE Trans. Nucl. Sci.; (United States)
OSTI ID:6065330

The radiation induced buildup of interface traps is examined on radiation hardened 20-nm gate oxide n-channel transistors irradiated with /sup 60/Co and 10 keV x-rays. A variation in the functional dependence of ..delta..D/sub it/ growth on dose from linear with dose to a square root dependence was observed. The samples with the largest low dose interface trap buildup showed the slowest rate of growth (D/sup 1/2/) while the samples with the smallest low dose ..delta..D/sub it/ show the fastest buildup (linear with dose). The authors offer a possible qualitative explanation of this behavior based on cluster centers. The interface trap density growth was also observed to tend toward saturation at doses above 3 Mrad(SiO/sub 2/). A photon energy dependence of D/sub it/ formation between /sup 60/Co and x-ray irradiation was not observed.

Research Organization:
Harry Diamond Labs., Adelphi, MD (US)
OSTI ID:
6065330
Report Number(s):
CONF-880730-
Journal Information:
IEEE Trans. Nucl. Sci.; (United States), Journal Name: IEEE Trans. Nucl. Sci.; (United States) Vol. 35:6; ISSN IETNA
Country of Publication:
United States
Language:
English

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