An evaluation of low-energy x-ray and cobalt-60 irradiations of MOS transistors
An evaluation of methodologies for irradiating MOS transistors with low-energy x-ray and Co-60 sources has been performed. The authors find that comparisons of voltage shifts produced by bulk trapped charge and interface states in MOS transistors irradiated using two different low energy x-ray sources (an ARACOR 10 keV W source and an 8 keV Cu source) agree to within better than 30 percent. This quality of agreement is similar in magnitude to that between MOS devices irradiated by different Co-60 sources. In contrast, the measurements indicate that interlaboratory comparisons of ratios of shifts produced by x-ray and Co-60 sources can lead to differences in ratios as large as a factor of --1.7. Improved electron-hole recombination data for oxides is presented. This recombination correction, in conjunction with a correction for interface dose enhancement, is used to predict the ratios of shifts produced by x-ray and Co-60 sources. However, the results show that corrections for electron-hole recombination and interface does enhancement do not, by themselves, adequately predict the field dependent behavior of these transistors.
- Research Organization:
- Condensed Matter Physics Branch, Naval Research Lab., Washington, DC (US)
- OSTI ID:
- 5120779
- Report Number(s):
- CONF-8707112-
- Journal Information:
- IEEE Trans. Nucl. Sci.; (United States), Journal Name: IEEE Trans. Nucl. Sci.; (United States) Vol. NS-34:6; ISSN IETNA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360605 -- Materials-- Radiation Effects
656003* -- Condensed Matter Physics-- Interactions between Beams & Condensed Matter-- (1987-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BETA DECAY RADIOISOTOPES
BETA-MINUS DECAY RADIOISOTOPES
COBALT 60
COBALT ISOTOPES
ELECTROMAGNETIC RADIATION
ELECTRONS
ELEMENTARY PARTICLES
EVALUATION
FERMIONS
INTERMEDIATE MASS NUCLEI
INTERNAL CONVERSION RADIOISOTOPES
IONIZING RADIATIONS
IRRADIATION
ISOMERIC TRANSITION ISOTOPES
ISOTOPES
LEPTONS
MINUTES LIVING RADIOISOTOPES
MOS TRANSISTORS
NUCLEI
ODD-ODD NUCLEI
PERFORMANCE TESTING
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATION SOURCES
RADIATIONS
RADIOISOTOPES
SEMICONDUCTOR DEVICES
TESTING
TRANSISTORS
X RADIATION
YEARS LIVING RADIOISOTOPES