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An evaluation of low-energy x-ray and cobalt-60 irradiations of MOS transistors

Conference · · IEEE Trans. Nucl. Sci.; (United States)
OSTI ID:5120779

An evaluation of methodologies for irradiating MOS transistors with low-energy x-ray and Co-60 sources has been performed. The authors find that comparisons of voltage shifts produced by bulk trapped charge and interface states in MOS transistors irradiated using two different low energy x-ray sources (an ARACOR 10 keV W source and an 8 keV Cu source) agree to within better than 30 percent. This quality of agreement is similar in magnitude to that between MOS devices irradiated by different Co-60 sources. In contrast, the measurements indicate that interlaboratory comparisons of ratios of shifts produced by x-ray and Co-60 sources can lead to differences in ratios as large as a factor of --1.7. Improved electron-hole recombination data for oxides is presented. This recombination correction, in conjunction with a correction for interface dose enhancement, is used to predict the ratios of shifts produced by x-ray and Co-60 sources. However, the results show that corrections for electron-hole recombination and interface does enhancement do not, by themselves, adequately predict the field dependent behavior of these transistors.

Research Organization:
Condensed Matter Physics Branch, Naval Research Lab., Washington, DC (US)
OSTI ID:
5120779
Report Number(s):
CONF-8707112-
Journal Information:
IEEE Trans. Nucl. Sci.; (United States), Journal Name: IEEE Trans. Nucl. Sci.; (United States) Vol. NS-34:6; ISSN IETNA
Country of Publication:
United States
Language:
English