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Charge yield for cobalt-60 and 10-keV x-ray irradiations of MOS devices

Conference · · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)
DOI:https://doi.org/10.1109/23.124092· OSTI ID:5826064
; ;  [1];  [2]
  1. Sandia National Labs., Albuquerque, NM (United States)
  2. L and M Technologies, Albuquerque, NM (US)

In this paper the radiation response of MOS devices exposed to {sup 60}Co and low-energy ({approximately}10 keV) x-ray irradiation is evaluated as a function of electric field during exposure. Improved charge yield estimates are obtained for {sup 60}Co irradiations at fields below 1 MV/cm by matching voltage shifts due to oxide-trap and interface-trap charge to an E{sup {minus}0.55} electric field dependence. Combining these improved charge yield estimates and calculated dose enhancement factors, the relative response of x-ray to {sup 60}Co irradiations is accurately predicted for oxide electric fields from 0.03 MV/cm to 5.0 MV/cm. The ability to predict the relative response of x-ray to {sup 60}Co irradiations should speed acceptance of x-ray testers as a hardness assurance tool.

DOE Contract Number:
AC04-76DP00789
OSTI ID:
5826064
Report Number(s):
CONF-910751--
Journal Information:
IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) Vol. 38:6; ISSN 0018-9499; ISSN IETNA
Country of Publication:
United States
Language:
English