Comparison of enhanced device response and predicted x-ray dose enhancement effects on MOS oxides
The response of MOS capacitors to low- and medium-energy x-ray irradiation is investigated as a function of gate material (TaSi or Al), oxide thickness, and electric field. Measured device response is compared with predictions based on discrete ordinates and Monte Carlo code simulations of dose enhancement effects, coupled with recent estimates of electron-hole recombination in MOS oxides. In comparisons of 10-keV x-ray and Co-60 irradiations of Al-gate MOS capacitors at an oxide electric field of 1 MV/cm, it is found that predictions and experiments agree to within better than 20 percent for oxide thicknesses ranging from 35 to 1060 nm. For capacitors having TaSi/Al gates, predictions and experiments agree to within better than 30 percent at 1 MV/cm, with the largest differences occurring for 35-nm gate oxides. At other electric fields, the disagreement between experiment and prediction increases significantly for both Al- and TaSi/Al-gate capacitors, and can be greater than a factor of 2 at applied electric fields below 0.1 MV/cm. For medium energy (-- 100 keV average photon energy) x-ray irradiations, the enhanced device response exhibits a much stronger dependence on endpoint bremsstrahlung energy than expected from TIGERP or CEPXS/ONETRAN simulations. Implications for hardness assurance testing are discussed.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (US); Naval Research Lab., Washington, DC (US); L and M Assoc., Albuquerque, NM (US); Sachs/Freeman Assoc., Landover, MD (US); Technical Support Corp., Albuquerque, NM (US)
- OSTI ID:
- 6065364
- Report Number(s):
- CONF-880730-
- Journal Information:
- IEEE Trans. Nucl. Sci.; (United States), Journal Name: IEEE Trans. Nucl. Sci.; (United States) Vol. 35:6; ISSN IETNA
- Country of Publication:
- United States
- Language:
- English
Similar Records
Radiation effects in TaSi/sub x//polysilicon MOS gate structures
Charge yield for cobalt-60 and 10-keV x-ray irradiations of MOS devices
Related Subjects
360605 -- Materials-- Radiation Effects
440200 -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
654001* -- Radiation & Shielding Physics-- Radiation Physics
Shielding Calculations & Experiments
73 NUCLEAR PHYSICS AND RADIATION PHYSICS
ALUMINIUM
BETA DECAY RADIOISOTOPES
BETA-MINUS DECAY RADIOISOTOPES
BREMSSTRAHLUNG
CAPACITORS
CHALCOGENIDES
COBALT 60
COBALT ISOTOPES
DIMENSIONS
DISCRETE ORDINATE METHOD
ELECTRIC FIELDS
ELECTRICAL EQUIPMENT
ELECTRICAL INSULATORS
ELECTROMAGNETIC RADIATION
ELECTRONIC CIRCUITS
ELEMENTS
EQUIPMENT
GATING CIRCUITS
HARDENING
INTERMEDIATE MASS NUCLEI
INTERNAL CONVERSION RADIOISOTOPES
IONIZING RADIATIONS
IRRADIATION
ISOMERIC TRANSITION ISOTOPES
ISOTOPES
METALS
MINUTES LIVING RADIOISOTOPES
MONTE CARLO METHOD
MOS TRANSISTORS
NUCLEI
ODD-ODD NUCLEI
OXIDES
OXYGEN COMPOUNDS
PHYSICAL RADIATION EFFECTS
PLASMA
QUALITY ASSURANCE
RADIATION EFFECTS
RADIATION HARDENING
RADIATIONS
RADIOISOTOPES
RECOMBINATION
SEMICONDUCTOR DEVICES
SILICON COMPOUNDS
SILICON OXIDES
SOLID-STATE PLASMA
TANTALUM
THICKNESS
TRANSISTORS
TRANSITION ELEMENTS
X RADIATION
YEARS LIVING RADIOISOTOPES