Comparison of low-energy x-ray and cobalt-60 irradiations of MOS devices as a function of gate bias
Conference
·
OSTI ID:5878869
- Sandia National Labs., Albuquerque, NM (USA)
- L and M Technologies, Inc., Albuquerque, NM (USA)
The E{sup {minus}{1/2}} electric field dependence of the saturated density of interface traps in MOS devices is used to improve estimates of charge yield during {sup 60}Co irradiations. Previous discrepancies between 10-keV x-ray and {sup 60}Co response are resolved. 14 refs., 7 figs.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (USA)
- Sponsoring Organization:
- DOD; Department of Defense, Washington, DC (USA)
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 5878869
- Report Number(s):
- SAND-91-0448C; CONF-910751--4; ON: DE91008174
- Country of Publication:
- United States
- Language:
- English
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An evaluation of low-energy x-ray and cobalt-60 irradiations of MOS transistors
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Related Subjects
42 ENGINEERING
426000 -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
BETA DECAY RADIOISOTOPES
BETA-MINUS DECAY RADIOISOTOPES
COBALT 60
COBALT ISOTOPES
ELECTRIC FIELDS
ELECTROMAGNETIC RADIATION
GAMMA RADIATION
INTERMEDIATE MASS NUCLEI
INTERNAL CONVERSION RADIOISOTOPES
IONIZING RADIATIONS
ISOMERIC TRANSITION ISOTOPES
ISOTOPES
MINUTES LIVING RADIOISOTOPES
MOS TRANSISTORS
NUCLEI
ODD-ODD NUCLEI
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATIONS
RADIOISOTOPES
SEMICONDUCTOR DEVICES
TRANSISTORS
X RADIATION
YEARS LIVING RADIOISOT
426000 -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
BETA DECAY RADIOISOTOPES
BETA-MINUS DECAY RADIOISOTOPES
COBALT 60
COBALT ISOTOPES
ELECTRIC FIELDS
ELECTROMAGNETIC RADIATION
GAMMA RADIATION
INTERMEDIATE MASS NUCLEI
INTERNAL CONVERSION RADIOISOTOPES
IONIZING RADIATIONS
ISOMERIC TRANSITION ISOTOPES
ISOTOPES
MINUTES LIVING RADIOISOTOPES
MOS TRANSISTORS
NUCLEI
ODD-ODD NUCLEI
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATIONS
RADIOISOTOPES
SEMICONDUCTOR DEVICES
TRANSISTORS
X RADIATION
YEARS LIVING RADIOISOT