Effect of bias on the response of metal-oxide-semiconductor devices to low-energy x-ray and cobalt-60 irradiation

Journal Article · Mon May 02 00:00:00 EDT 1988 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.99116· OSTI ID:5322600

Fleetwood, D M; Winokur, P S; Dozier, C M; Brown, D B

The response of metal-oxide-semiconductor (MOS) transistors and capacitors to high-energy Co-60 gamma and low-energy x-ray irradiation is evaluated as a function of gate bias during exposure. It is demonstrated that, in contrast to previous expectations, the relative response of MOS devices to Co-60 gamma and 10 keV x-ray irradiation cannot be explained simply in terms of electron-hole recombination and dose enhancement effects.

• Research Organization: Sandia National Laboratories, Albuquerque, New Mexico 87185
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 5322600
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 52:18; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605 -- Materials-- Radiation Effects
42 ENGINEERING
420800* -- Engineering-- Electronic Circuits & Devices-- (-1989)
BETA DECAY RADIOISOTOPES
BETA-MINUS DECAY RADIOISOTOPES
CAPACITORS
COBALT 60
COBALT ISOTOPES
ELECTRICAL EQUIPMENT
ELECTRICAL PROPERTIES
ELECTROMAGNETIC RADIATION
ENERGY RANGE
EQUIPMENT
INTERMEDIATE MASS NUCLEI
INTERNAL CONVERSION RADIOISOTOPES
IONIZING RADIATIONS
ISOMERIC TRANSITION ISOTOPES
ISOTOPES
KEV RANGE
KEV RANGE 01-10
MINUTES LIVING RADIOISOTOPES
MOS TRANSISTORS
NUCLEI
ODD-ODD NUCLEI
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATIONS
RADIOISOTOPES
RECOMBINATION
SEMICONDUCTOR DEVICES
TRANSISTORS
X RADIATION
YEARS LIVING RADIOISOTOPES