Traps in molecular-beam epitaxial In sub 0. 53 (Ga sub x Al sub 1 minus x ) sub 0. 47 As/InP

Journal Article · Thu Mar 01 04:00:00 EST 1990 · Journal of Applied Physics; (USA)

DOI:https://doi.org/10.1063/1.345492· OSTI ID:7197983

Biswas, D; Chin, A; Pamulapati, J; Bhattacharya, P ^[1]

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1. Center for High-Frequency Microelectronics and Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, Michigan 48109-2122 (USA)

Deep-level transient spectroscopy measurements have been made on molecular-beam epitaxial In{sub 0.53}(Ga{sub {ital x}}Al{sub 1{minus}{ital x}}){sub 0.47}As lattice matched to InP. Several electron and hole traps, with activation energies ranging from 0.14 to 0.79 eV, have been identified and characterized. In particular, systems of electron traps (0.30{le}{Delta}{ital E}{sub {ital T}}{le}0.79 eV) and hole traps (0.14{le}{Delta}{ital E}{sub {ital T}}{le}0.31 eV) with monotonically changing activation energies have been identified in these alloys. We believe these traps are dominant in this alloy system.

• OSTI ID: 7197983
• Journal Information: Journal of Applied Physics; (USA), Journal Name: Journal of Applied Physics; (USA) Vol. 67:5; ISSN 0021-8979; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
ACTIVATION ENERGY
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
DOPED MATERIALS
ELEMENTS
ENERGY
ENERGY LEVELS
EPITAXY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
LOW TEMPERATURE
LUMINESCENCE
MATERIALS
MEDIUM TEMPERATURE
MOLECULAR BEAM EPITAXY
NONMETALS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHOTOLUMINESCENCE
PNICTIDES
SEMIMETALS
SILICON
SPECTROSCOPY
SULFUR
TRAPS