GaAs/InP and InAs/InP heterojunction band offsets measured by x-ray photoemission spectroscopy

Journal Article · Sat Jul 01 04:00:00 EDT 1989 · J. Vac. Sci. Technol., B; (United States)

DOI:https://doi.org/10.1116/1.584606· OSTI ID:5888548

Waldrop, J R; Grant, R W; Kraut, E A

X-ray photoemission spectroscopy (XPS) has been used to measure the unstrained valence-band offset /Delta//ital E//sub /ital v// for the /ital x/=0 and /ital x/=1 end points of the In/sub /ital x// Ga/sub 1/minus//ital x// As/InP (100) heterojunction system. Although the GaAs/InP (100) and InAs/InP (100) pseudomorphic interfaces investigated are strained because of lattice mismatch, the /Delta//ital E//sub /ital v// values obtained by the XPS measurement analysis used are interpreted as characteristic of an unstrained interface. Strain-free values of /Delta//ital E//sub /ital v// (GaAs/InP)=0.19 eV and /Delta//ital E//sub /ital v// (InAs/InP)=0.31 eV are reported. A linear interpolation of these /ital x/=0 and /ital x/=1 unstrained values gives /Delta//ital E//sub /ital v// (In/sub 0.53/ Ga/sub 0.47/ As/InP)=0.25 eV (/Delta//ital E//sub /ital c////Delta//ital E//sub /ital v// =58/42) for the lattice-matched interface.

• Research Organization: Rockwell International Science Center, Thousand Oaks, California 91360(US)
• OSTI ID: 5888548
• Journal Information: J. Vac. Sci. Technol., B; (United States), Journal Name: J. Vac. Sci. Technol., B; (United States) Vol. 7:4; ISSN JVTBD
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
ARSENIC COMPOUNDS
ARSENIDES
BAND THEORY
ELECTRON SPECTROSCOPY
ELECTRONIC STRUCTURE
EMISSION
ENERGY GAP
EPITAXY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
INTERFACES
JUNCTIONS
MOLECULAR BEAM EPITAXY
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHOTOELECTRON SPECTROSCOPY
PHOTOEMISSION
PNICTIDES
SECONDARY EMISSION
SEMICONDUCTOR JUNCTIONS
SPECTROSCOPY