GaAs/InP and InAs/InP heterojunction band offsets measured by x-ray photoemission spectroscopy

Journal Article · Sat Jul 01 00:00:00 EDT 1989 · J. Vac. Sci. Technol., B; (United States)

DOI:https://doi.org/10.1116/1.584606· OSTI ID:5888548

Waldrop, J R; Grant, R W; Kraut, E A

X-ray photoemission spectroscopy (XPS) has been used to measure the unstrained valence-band offset /Delta//ital E//sub /ital v// for the /ital x/=0 and /ital x/=1 end points of the In/sub /ital x// Ga/sub 1/minus//ital x// As/InP (100) heterojunction system. Although the GaAs/InP (100) and InAs/InP (100) pseudomorphic interfaces investigated are strained because of lattice mismatch, the /Delta//ital E//sub /ital v// values obtained by the XPS measurement analysis used are interpreted as characteristic of an unstrained interface. Strain-free values of /Delta//ital E//sub /ital v// (GaAs/InP)=0.19 eV and /Delta//ital E//sub /ital v// (InAs/InP)=0.31 eV are reported. A linear interpolation of these /ital x/=0 and /ital x/=1 unstrained values gives /Delta//ital E//sub /ital v// (In/sub 0.53/ Ga/sub 0.47/ As/InP)=0.25 eV (/Delta//ital E//sub /ital c////Delta//ital E//sub /ital v// =58/42) for the lattice-matched interface.

• Research Organization: Rockwell International Science Center, Thousand Oaks, California 91360(US)
• OSTI ID: 5888548
• Journal Information: J. Vac. Sci. Technol., B; (United States), Vol. 7:4
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
GALLIUM ARSENIDES
ELECTRONIC STRUCTURE
INDIUM ARSENIDES
INDIUM PHOSPHIDES
BAND THEORY
ENERGY GAP
HETEROJUNCTIONS
INTERFACES
MOLECULAR BEAM EPITAXY
PHOTOELECTRON SPECTROSCOPY
PHOTOEMISSION
ARSENIC COMPOUNDS
ARSENIDES
ELECTRON SPECTROSCOPY
EMISSION
EPITAXY
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
JUNCTIONS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
SECONDARY EMISSION
SEMICONDUCTOR JUNCTIONS
SPECTROSCOPY
360603* - Materials- Properties