Band offsets for pseudomorphic InP/GaAs

Journal Article · Mon Jan 16 04:00:00 EST 1989 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.100983· OSTI ID:6599394

Nolte, D D

Recently determined band-edge hydrostatic deformation potentials are used to predict heterojunction band offsets for the pseudomorphic GaAs-InP system. The calculations include GaAs/InP, InP/GaAs, and strained-layer GaAs-InP superlattices for both (100) and (111) oriented epitaxial growth. The offsets are type II for the unstrained case. The large hydrostatic contributions to the stress-induced band offsets can convert the offsets to type I. This conversion is especially apparent for growth in the (111) direction because of the small Poisson ratio for biaxial stress in the (111) plane.

• Research Organization: Center for Advanced Materials, Lawrence Berkeley Laboratory, and University of California, Berkeley, California 92720
• OSTI ID: 6599394
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 54:3; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
ARSENIC COMPOUNDS
ARSENIDES
DATA
ELECTRONIC STRUCTURE
ENERGY GAP
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
INFORMATION
JUNCTIONS
NUMERICAL DATA
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
SEMICONDUCTOR JUNCTIONS
STRESSES
SUPERLATTICES
THEORETICAL DATA