Valence-band offset and interface chemistry of CdS/InP(110)

Journal Article · Sat Jul 01 04:00:00 EDT 1989 · J. Vac. Sci. Technol., B; (United States)

DOI:https://doi.org/10.1116/1.584605· OSTI ID:5951653

Wilke, W G; Seedorf, R; Horn, K

The CdS/InP(110) heterojunction, which is one example of a lattice matched combination among the junctions between II--VI and III--V compound semiconductors, was studied on molecular-beam epitaxy grown samples on cleaved as well as ion bombarded and annealed InP(110) surfaces. The junctions were characterized by core and valence photoemission using synchrotron radiation, Auger electron spectroscopy (AES), and low-energy electron diffraction (LEED). Deposition of CdS on cleaved InP(110) surfaces led to layers which exhibited good laminar growth, and gave sharp LEED patterns with fairly low background, with a periodicity of the InP(110) substrate lattice, demonstrating that CdS was grown in the metastable zinc-blende conformation. On InP surfaces cleaned by ion bombardment and annealing, however, growth of crystalline CdS could not be achieved. From the evaluation of band bending upon CdS growth on the basis of core level, line-shape deconvolution, and the changes in the valence-band emission, we have derived a valence-band offset in this system of /minus/0.77/plus minus/0.1 eV; this means that this heterojunction is of the straddling type, in disagreement with previous data from /ital C/--/ital V/ measurements which indicated a staggered lineup. We compare our result for the band lineup with current theoretical models.

• Research Organization: Fritz-Haber-Institut der Max-Planck-Gesellschaft D-1000 Berlin 33 West Germany(DE); Fritz-Haber-Institut der Max-Planck-Gesellschaft D-1000 Berlin 33 West Germany, and Institut fur Festkorperphysik der Technischen Universitat Berlin D-1000 Berlin 12 West Germany; Fritz-Haber-Institut der Max-Planck-Gesellschaft D-1000 Berlin 33 West Germany
• OSTI ID: 5951653
• Journal Information: J. Vac. Sci. Technol., B; (United States), Journal Name: J. Vac. Sci. Technol., B; (United States) Vol. 7:4; ISSN JVTBD
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
AUGER ELECTRON SPECTROSCOPY
CADMIUM COMPOUNDS
CADMIUM SULFIDES
CHALCOGENIDES
COHERENT SCATTERING
DIFFRACTION
ELECTRON DIFFRACTION
ELECTRON SPECTROSCOPY
ELECTRONIC STRUCTURE
ENERGY GAP
EPITAXY
HETEROJUNCTIONS
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
INORGANIC PHOSPHORS
INTERFACES
JUNCTIONS
MOLECULAR BEAM EPITAXY
PHOSPHIDES
PHOSPHORS
PHOSPHORUS COMPOUNDS
PHOTOELECTRON SPECTROSCOPY
PNICTIDES
SCATTERING
SEMICONDUCTOR JUNCTIONS
SPECTROSCOPY
SULFIDES
SULFUR COMPOUNDS
VALENCE