Growth and properties of AlInAs-GaInAs alloys and quantum wells on (110) InP

Journal Article · Sat May 01 04:00:00 EDT 1993 · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena

DOI:https://doi.org/10.1116/1.586753· OSTI ID:149601

Brown, A S; Metzger, R A; Henige, J A ^[1]

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1. Hughes Research Lab., Malibu, CA (United States)

GaInAs and AlInAs structures have been grown on on-axis and misoriented [4{degrees}-(111) In-plane] (110) InP substrates. In general, the growth on the on-axis substrates shows a high density of defects; while the surface morphology using misoriented substrates is smooth. A smooth morphology is obtained on on-axis (110) InP, however, with a low substrate temperature and high V/III ratio. The photoluminescence properties of the individual alloys grown on (110) show high intensities, similar to that which can be obtained on (100) substrates, but the peaks are significantly broadened and shifted in energy. The interface quality of the GaInAs-AlInAs (110) heterojunction, inferred from the linewidths of quantum well emissions, is improved by growing at higher temperature. 15 refs., 4 figs.

• Sponsoring Organization: USDOE
• OSTI ID: 149601
• Report Number(s): CONF-9210296--
• Journal Information: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena Journal Issue: 3 Vol. 11; ISSN 0734-211X; ISSN JVTBD9
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM ARSENIDES
GALLIUM ARSENIDES
INDIUM ARSENIDES
MORPHOLOGY
OPTICAL PROPERTIES
PHOTOLUMINESCENCE