High-power V-band AlInAs/GaInAS on InP HEMT's

Journal Article · Wed Mar 31 23:00:00 EST 1993 · IEEE Electron Device Letters (Institute of Electrical and Electronics Engineers); (United States)

DOI:https://doi.org/10.1109/55.215155· OSTI ID:6508618

Matloubian, M; Brown, A S; Nguyen, L D; Melendes, M A; Larson, L E; Delaney, M J; Pence, J E; Rhodes, R A; Thompson, M A; Henige, J A ^[1]

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1. Hughes Research Lab., Malibu, CA (United States)

The authors on the dc and RF performance of [delta]-doped channel AlInAs/GaInAs on InP power HEMT's. A 450-[mu]m-wide device with a gate length of 0.22 [mu]m has achieved an output power of 150 mW (at the 1-dB gain compression point) with power-added efficiency of 20% at 57 GHz. The device has a saturated output power of 200 mW with power-added efficiency of 17%. This is the highest output power measured from a single InP-based HEMT at this frequency, and demonstrates the feasibility of these HEMT's for high-power applications in addition to low-noise applications at V band.

• OSTI ID: 6508618
• Journal Information: IEEE Electron Device Letters (Institute of Electrical and Electronics Engineers); (United States), Journal Name: IEEE Electron Device Letters (Institute of Electrical and Electronics Engineers); (United States) Vol. 14:4; ISSN 0741-3106; ISSN EDLEDZ
• Country of Publication: United States
• Language: English

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