Effect of band offset on carrier transport and infrared detection in InP quantum dots/Si nano-heterojunction grown by metalorganic chemical vapor deposition technique

Journal Article · Wed May 28 00:00:00 EDT 2014 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4880738· OSTI ID:22304280

Halder, Nripendra N. ^[1]; Biswas, Pranab; Nagabhushan, B.; Kundu, Souvik ^[2]; Biswas, D. ^[3]

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1. Advanced Technology Development Centre, Indian Institute of Technology, Kharagpur 721 302 (India)
2. School of Electrical Engineering and Computer Science, Oregon State University, 1148 Kelley Engineering Center, Corvallis, Oregon 97331-5501 (United States)
3. Department of Electronics and Electrical Communication Engineering, Indian Institute of Technology, Kharagpur 721 302 (India)

Epitaxy of III-V semiconductors on Si gets recent interest for next generation system on heterogeneous chip on wafer. The understanding of band offset is thus necessary for describing the charge transport phenomenon in these heterojunctions. In this work, x-ray photoemission spectroscopy has been used to determine the band offsets in a heterojunction made of InP quantum dots on Si. The valence and conduction band offset was found to be 0.12 eV and 0.35 eV, respectively, with a type-II band lineup. Deviation from theoretical prediction and previously published reports on quasi similar systems have been found and analyzed on the basis of the effect of strain, surface energy, shift in the electrostatic dipole and charge transfer at the interface. The carrier transport mechanisms along with different device parameters in the heterojunction have been studied for a temperature range of 180–300 K. This heterojunction is found to behave as an efficient infrared photodetector with an ON/OFF ratio of 21 at a reverse bias of 2 V. The corresponding rise and decay time was found to be 132 ms and 147 ms, respectively.

• OSTI ID: 22304280
• Journal Information: Journal of Applied Physics, Vol. 115, Issue 20; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CARRIERS
CHARGE TRANSPORT
CHEMICAL VAPOR DEPOSITION
DETECTION
EPITAXY
EV RANGE
FORECASTING
HETEROJUNCTIONS
INDIUM PHOSPHIDES
INTERFACES
NANOSTRUCTURES
PHOTOEMISSION
QUANTUM DOTS
SEMICONDUCTOR MATERIALS
SILICON
SPECTROSCOPY
SURFACE ENERGY
X RADIATION