Band edge alignment of pseudomorphic GaAs{sub 1-y}Sb{sub y} on GaAs

Journal Article · Mon Nov 15 04:00:00 EST 2004 · Physical Review. B, Condensed Matter and Materials Physics

DOI:https://doi.org/10.1103/PhysRevB.70.195339· OSTI ID:20662190

Wang, J -B; Johnson, S R; Chaparro, S A; Ding, D; Cao, Y; Sadofyev, Yu G; Zhang, Y -H; Gupta, J A; Guo, C Z ^[1]

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1. Department of Electrical Engineering and Center for Solid State Electronics Research, Arizona State University, Tempe, Arizona 85287 (United States)

Measurements of the transition energies of GaAsSb quantum well samples with different barrier configurations reveal that the conduction band offset of the coherently strained GaAs{sub 1-y}Sb{sub y}/GaAs heterojunction grown on GaAs has a zero crossing at a Sb mole fraction of y=0.43{+-}0.07. A type-I band alignment is formed for lower Sb mole fractions and a type-II band alignment is formed for higher Sb mole fractions. This occurs as a consequence of a considerable amount (58%) of the -1.58 eV bandgap bowing being distributed to the conduction band. As a suitable active material for 1.3 {mu}m emission, pseudomorphic GaAs{sub 0.643}Sb{sub 0.357} grown on GaAs is determined to have a weak, 23{+-}23 meV, type-I conduction band offset and a bandgap energy of 928{+-}4 meV.

• OSTI ID: 20662190
• Journal Information: Physical Review. B, Condensed Matter and Materials Physics, Journal Name: Physical Review. B, Condensed Matter and Materials Physics Journal Issue: 19 Vol. 70; ISSN 1098-0121
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALIGNMENT
ENERGY GAP
EV RANGE 01-10
GALLIUM ARSENIDES
HETEROJUNCTIONS
MILLI EV RANGE
QUANTUM WELLS
SEMICONDUCTOR MATERIALS