Influence of the InAs-GaAs miscibility gap on the In/GaAs reaction
Conference
·
OSTI ID:7195064
The In/GaAs reaction in the temperature range 350 to 650/sup 0/C has been studied by analytical and high resolution electron microscopy and electron and x-ray diffraction. Histograms of the compositions of the In/sub 1-x/Ga/sub x/As precipitates formed during annealing confirm the existence of a miscibility gap in the InAs-GaAs pseudo-binary system. Implications of these results for the fabrication of graded layer In/sub 1-x/Ga/sub x/As/n-GaAs ohmic contacts by thermal reaction are discussed.
- Research Organization:
- Lawrence Berkeley Lab., CA (USA); Bell Communications Research, Inc., Murray Hill, NJ (USA)
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 7195064
- Report Number(s):
- LBL-22082; CONF-8609150-6; ON: DE87002542
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
ANNEALING
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL REACTIONS
COHERENT SCATTERING
DIAGRAMS
DIFFRACTION
ELECTRON DIFFRACTION
ELECTRON MICROSCOPY
ELEMENTS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HEAT TREATMENTS
HIGH TEMPERATURE
INDIUM
INDIUM ARSENIDES
INDIUM COMPOUNDS
INTERFACES
LAYERS
METALS
MICROSCOPY
PHASE DIAGRAMS
PNICTIDES
PRODUCTION
SCATTERING
X-RAY DIFFRACTION
360601* -- Other Materials-- Preparation & Manufacture
ANNEALING
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL REACTIONS
COHERENT SCATTERING
DIAGRAMS
DIFFRACTION
ELECTRON DIFFRACTION
ELECTRON MICROSCOPY
ELEMENTS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HEAT TREATMENTS
HIGH TEMPERATURE
INDIUM
INDIUM ARSENIDES
INDIUM COMPOUNDS
INTERFACES
LAYERS
METALS
MICROSCOPY
PHASE DIAGRAMS
PNICTIDES
PRODUCTION
SCATTERING
X-RAY DIFFRACTION