Evaluation of ohmic contacts to GaAs(100) and (111)B using InAs/GaAs short period superlattice and InGaAs intermediate layers

Journal Article · Thu Jul 01 04:00:00 EDT 1993 · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena

DOI:https://doi.org/10.1116/1.586470· OSTI ID:161757

Hooper, S E; Wilks, S P; Elliot, M ^[1]

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1. Univ. of Wales College of Cardiff (United Kingdom); and others

The nature of InAs/GaAs short period superlattice (SPS) and In{sub x}Ga{sub l-x}As based ohmic contacts, grown by molecular-beam epitaxy, on GaAs(100) and (111)B surfaces have been investigated. The resistive nature of the contacts formed on GaAs(100), using an intermediate InAs/GaAs SPS between the metal and the substrate were found to be comparable with those obtained with an equivalent In{sub 0.33}Ga{sub 0.67}As interlayer. A model is described that accounts for the ohmic contact to the In{sub x}Ga{sub 1-x}As structure and may apply to the SPS. Unlike the GaAs(100) configurations, similar contacts to GaAs (111)B were found to differ greatly in their resistive nature; this is a likely consequence of the laminar growth mode and poor crystalline quality of InAs epilayers grown on this substrate orientation, coupled to a higher barrier at the InAs-GaAs (111)B interface. 12 refs., 5 figs.

• OSTI ID: 161757
• Report Number(s): CONF-930115--
• Journal Information: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena Journal Issue: 4 Vol. 11; ISSN JVTBD9; ISSN 0734-211X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL STRUCTURE
ELECTRIC CONTACTS
GALLIUM ARSENIDES
INDIUM ARSENIDES
MOLECULAR BEAM EPITAXY
OPTICAL PROPERTIES
PHYSICAL PROPERTIES
SURFACES