Structural ordering in InGaAs/GaAs superlattices

Journal Article · Tue Oct 01 04:00:00 EDT 1996 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.363421· OSTI ID:389018

Ming, Z H; Soo, Y L; Huang, S; Kao, Y H ^[1]; Stair, K; Devane, G; Choi-Feng, C ^[2]

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1. Department of Physics, SUNY at Buffalo, Buffalo, New York 14260 (United States)
2. Amoco Technology Company, P.O. Box 3011, Naperville, Illinois 60566 (United States)

Various x-ray techniques have been applied to a study of semiconductor superlattices consisting of 100-period of In{sub {ital x}}Ga{sub 1{minus}{ital x}}As (15 A)/GaAs (100 A) grown on GaAs(100) substrates by molecular beam epitaxy. Structural parameters pertaining to the morphology of interfaces and thickness variations were obtained. The interfaces in these superlattices are found to be highly correlated, and the layers all show a high degree of crystallinity. Splittings in the x-ray reflectivity and diffraction patterns in one of the samples provide clear evidence for pronounced thickness modulation, and direct comparison of the diffraction satellite peaks with results of high resolution transmission electron microscopy indicates that there exists a lateral structural ordering in the [110] direction during epitaxial growth. {copyright} {ital 1996 American Institute of Physics.}

• DOE Contract Number: FG02-86ER45231; FG02-87ER45283
• OSTI ID: 389018
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 8 Vol. 80; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALKYLATING AGENTS
CRYSTAL STRUCTURE
GALLIUM ARSENIDES
INDIUM ARSENIDES
INTERFACE STRUCTURE
INTERFACES
MOLECULAR BEAM EPITAXY
ORDER PARAMETERS
SUPERLATTICES
THICKNESS
X-RAY DIFFRACTION
XRD