In/GaAs reaction: Effect of an intervening oxide layer

Journal Article · Mon Sep 29 04:00:00 EDT 1986 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.97557· OSTI ID:5141866

Ding, J; Washburn, J; Sands, T; Keramidas, V G

The effects of a thin (--1.3 nm) intervening native GaAs oxide interface layer on the In/GaAs reaction have been investigated by comparing the reactions of In on GaAs substrates with the native oxide present or desorbed. Transmission electron microscopy of cross-sectional samples reveals that the thin native oxide layer, when present, disrupts the In/GaAs orientation relationship in as-deposited samples and prevents an extensive reaction between In and GaAs at 350/sup 0/C. These data also show that the In/GaAs reaction at 350/sup 0/C proceeds by dissolution of the GaAs substrate into the molten In followed by the subsequent nucleation and growth of epitaxial InAs particles with xless than or equal to0.2 or xgreater than or equal to0.8 only, indicating immiscibility. The InGa/sub x/As/GaAs interfaces are found to be structurally and compositionally abrupt to within --3 nm. The effects of the interfacial native oxide on the In/GaAs reaction and the suggested presence of an InAs-GaAs miscibility gap have implications for the fabrication of In/GaAs ohmic contacts by thermal reaction.

• Research Organization: Materials and Molecular Research Division, Lawrence Berkeley Laboratory, University of California, Berkeley, California 94720
• DOE Contract Number: AC03-76SF00098
• OSTI ID: 5141866
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 49:13; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601 -- Other Materials-- Preparation & Manufacture
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
400201* -- Chemical & Physicochemical Properties
42 ENGINEERING
420800 -- Engineering-- Electronic Circuits & Devices-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COMPOSITION
CHEMICAL REACTIONS
ELECTRIC CONTACTS
ELECTRICAL EQUIPMENT
ELEMENTS
EPITAXY
EQUIPMENT
FABRICATION
FILMS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM
INDIUM ARSENIDES
INDIUM COMPOUNDS
INTERFACES
LIQUID PHASE EPITAXY
METALS
PNICTIDES
THIN FILMS