Reduction of capture barrier height of pressure-induced deep donors (DX center) in GaAs:Si
Conference
·
OSTI ID:7180751
When boron was introduced into GaAs:Si, the DX-like deep donors which appeared in GaAs under pressure were found to disappear while new centers with reduced capture barrier heights appeared. It is proposed that B atoms paired up with Si donor atoms. The reduction in the capture barrier height is interpreted in terms of a recent model proposed by Chadi and Chang. 12 refs., 3 figs., 1 tab.
- Research Organization:
- Lawrence Berkeley Lab., CA (USA)
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 7180751
- Report Number(s):
- LBL-25692; CONF-8808106-2; ON: DE88016639
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
360603 -- Materials-- Properties
656002* -- Condensed Matter Physics-- General Techniques in Condensed Matter-- (1987-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BORON
CAPTURE
DOPED MATERIALS
ELECTRON CAPTURE
ELEMENTS
MATERIALS
PRESSURE DEPENDENCE
SCHOTTKY BARRIER DIODES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR MATERIALS
SEMIMETALS
SILICON
TEMPERATURE DEPENDENCE
360603 -- Materials-- Properties
656002* -- Condensed Matter Physics-- General Techniques in Condensed Matter-- (1987-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BORON
CAPTURE
DOPED MATERIALS
ELECTRON CAPTURE
ELEMENTS
MATERIALS
PRESSURE DEPENDENCE
SCHOTTKY BARRIER DIODES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR MATERIALS
SEMIMETALS
SILICON
TEMPERATURE DEPENDENCE