Effect of boron on the deep donors (DX centers) in GaAs:Si
Journal Article
·
· Appl. Phys. Lett.; (United States)
We found that, when boron was introduced into GaAs:Si, the deep donors induced by pressure exceeding 20 kbar reported previously by M. Mizuta, M. Tachikawa, H. Kukimoto, and S. Minomura (J. Appl. Phys. 24, L143 (1985)) disappeared while new donor levels with reduced binding energies and capture barrier heights appeared. It is proposed that B atoms paired up with Si donor atoms and the resultant change in the short-range potential of the Si donor atoms depressed the capture barrier height of the pressure-induced deep donor.
- Research Organization:
- Department of Physics, University of California, Berkeley, and Materials and Chemical Sciences Division, Lawrence Berkeley Laboratory, Berkeley, California 94720
- OSTI ID:
- 6150362
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 54:14; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
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