Lattice relaxation of pressure-induced deep centers in GaAs:Si

Journal Article · Mon Aug 03 04:00:00 EDT 1987 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.98437· OSTI ID:6510798

Li, M F; Yu, P Y; Weber, E R; Hansen, W

Deep centers induced by hydrostatic pressure in GaAs:Si have been studied by deep level transient spectroscopy and constant temperature capacitance transient techniques. The capture behavior of these centers has been studied in detail and found to be consistent with the multiphonon emission theory. The pressure coefficients of the ionization energy and the barrier height are consistent with the large lattice relaxation model proposed by D. V. Lang and R. A. Logan (Phys. Rev. Lett. 39, 635 (1977)).

• Research Organization: Department of Physics, University of California, Berkeley and Center for Advanced Materials, Lawrence Berkeley Laboratory, Berkeley, California 94720
• DOE Contract Number: AC03-76SF00098
• OSTI ID: 6510798
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 51:5; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360604* -- Materials-- Corrosion
Erosion
& Degradation
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL LATTICES
CRYSTAL STRUCTURE
DATA
DEEP LEVEL TRANSIENT SPECTROSCOPY
ELECTRONIC STRUCTURE
EXPERIMENTAL DATA
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INFORMATION
NUMERICAL DATA
PHONONS
PNICTIDES
PRESSURE EFFECTS
QUASI PARTICLES
RELAXATION
SPECTROSCOPY