Lattice relaxation of the DX centers in Ga/sub 1-x/Al/sub x/As and of the pressure-induced deep donors in GaAs

Conference · Sun Nov 01 04:00:00 EST 1987

OSTI ID:5555063

Li, M F; Shan, W; Yu, P Y; Hansen, W L; Weber, E R; Bauser, E

Deep Level Transient Spectroscopies (DLTS) and capacitance transient techniques have been applied to GaAs:Si and to Ga/sub 1-x/Al/sub x/As:Te (x = 0.35) under quasi-hydrostatic pressure using a diamond anvil cell. By substituting the experimental pressure coefficients of the defect energies into a model proposed by Li and Yu (Solid State Commun. 61, 13 (1987)) we concluded that both the DX center in the GaAlAs alloy and the pressure-induced deep donor (PIDD) in GaAs have large lattice relaxations associated with them.

• Research Organization: Lawrence Berkeley Lab., CA (USA); Max-Planck-Institut fuer Festkoerperforschung, Stuttgart (Germany, F.R.)
• DOE Contract Number: AC03-76SF00098
• OSTI ID: 5555063
• Report Number(s): LBL-24523; CONF-871124-66; ON: DE88005452
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360602* -- Other Materials-- Structure & Phase Studies
ALLOYS
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL DEFECTS
CRYSTAL LATTICES
CRYSTAL STRUCTURE
ENERGY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
PNICTIDES
PRESSURE DEPENDENCE
RELAXATION
SILICON ADDITIONS
SILICON ALLOYS
TELLURIUM ADDITIONS
TELLURIUM ALLOYS
VERY HIGH PRESSURE