Photocapacitance study of pressure-induced deep donors in GaAs:Si

Journal Article · Tue Sep 15 00:00:00 EDT 1987 · Phys. Rev. B: Condens. Matter; (United States)

DOI:https://doi.org/10.1103/PhysRevB.36.4531· OSTI ID:6230040

Li, M F; Yu, P Y; Weber, E R; Hansen, W

Photocapacitance transient measurements in GaAs:Si under pressures of 33 and 38 kbar are reported for the first time. The optical ionization energy of pressure-induced deep donors in GaAs was determined to be 1.44 +- 0.04 eV. The low-temperature capture times of photoexcited carriers were also measured and the results indicate that persistent photoconductivity would occur in GaAs under pressures in excess of 30 kbar. These results show that qualitatively the pressure-induced deep donors in GaAs are very similar to the DX centers in Ga/sub 1-//sub x/Al/sub x/As alloys in terms of their optical properties.

• Research Organization: Department of Physics, University of California, California 94720
• OSTI ID: 6230040
• Journal Information: Phys. Rev. B: Condens. Matter; (United States), Journal Name: Phys. Rev. B: Condens. Matter; (United States) Vol. 36:8; ISSN PRBMD
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
ARSENIC COMPOUNDS
ARSENIDES
BINDING ENERGY
CAPACITANCE
COLOR CENTERS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DOPED MATERIALS
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELECTRONS
ELEMENTARY PARTICLES
ELEMENTS
ENERGY
FERMIONS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
IMPURITIES
IONIZATION
LEPTONS
MATERIALS
PHOTOCONDUCTIVITY
PHOTOIONIZATION
PHYSICAL PROPERTIES
PNICTIDES
POINT DEFECTS
PRESSURE DEPENDENCE
SCHOTTKY BARRIER DIODES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMIMETALS
SILICON
VACANCIES
VALENCE
VERY HIGH PRESSURE