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A comparison of the pressure-induced deep donors in GaAs:Si and the DX centers in GaAlAs:Si alloys

Conference ·
OSTI ID:6834540
; ; ; ;
A comparison is made between the emission and capture activation energies of the pressure-induced deep donors in GaAs (both with and without boron) and the DX center in AlGaAs. It is suggested that the emission and capture activation energies of the DX center are influenced by its next nearest neighbors. 10 refs., 1 fig., 2 tabs.
Research Organization:
Lawrence Berkeley Lab., CA (USA)
DOE Contract Number:
AC03-76SF00098
OSTI ID:
6834540
Report Number(s):
LBL-25689; CONF-880884-3; ON: DE88016666
Country of Publication:
United States
Language:
English

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Related Subjects

36 MATERIALS SCIENCE
360602 -- Other Materials-- Structure & Phase Studies
360603* -- Materials-- Properties
360605 -- Materials-- Radiation Effects
ACTIVATION ENERGY
ARRHENIUS EQUATION
ARSENIC COMPOUNDS
ARSENIDES
CAPTURE
CHARGED PARTICLES
DOPED MATERIALS
ELECTRON CAPTURE
ELECTRON EMISSION
ELECTRONIC STRUCTURE
EMISSION
ENERGY
EQUATIONS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
IONIZATION
IONS
MATERIALS
PHOTOIONIZATION
PNICTIDES
PRESSURE EFFECTS
SILICON IONS