Defect-defect hole transfer and the identity of border traps in SiO[sub 2] films

Journal Article · Tue Nov 15 04:00:00 EST 1994 · Physical Review, B: Condensed Matter; (United States)

DOI:https://doi.org/10.1103/PhysRevB.50.14710· OSTI ID:7180494

Warren, W L; Fleetwood, D M; Shaneyfelt, M R; Winokur, P S ^[1]; Devine, R A.B. ^[2]

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1. Sandia National Laboratories, Albuquerque, New Mexico 87185-1349 (United States)
2. France Telecom/Centre National d'Etudes des Telecommunications, Boite Postale 98, 38243 Meylan (France)

We have found evidence for hole-transfer events between oxygen-vacancy-related defects in thermal SiO[sub 2] films selectively injected with holes using electron paramagnetic resonance (EPR) and capacitance-voltage measurements. We find that hole injection into SiO[sub 2] films reveals two types of EPR centers: oxygen-vacancy-related [ital E][sub [delta]][sup [prime]] and [ital E][sub [gamma]][sup [prime]] centers; both centers are positively charged. Upon annealing the Si/SiO[sub 2] structures at room temperature, the [ital E][sub [delta]][sup [prime]] defect transfers its hole to a neutral oxygen-vacancy (O[sub 3][equivalent to]Si---Si[equivalent to]O[sub 3]) site forming the classic [ital E][sub [gamma]][sup [prime]] center. Electrically, we observe a concomitant growth in the border-trap density, suggesting that some of the transfer-created [ital E][sub [gamma]][sup [prime]] centers may be the microscopic entities responsible for the border traps. These results constitute spectroscopic evidence that hole transfer between defect sites can occur over extremely long time scales (hours) in SiO[sub 2] films.

• DOE Contract Number: AC04-94AL85000
• OSTI ID: 7180494
• Journal Information: Physical Review, B: Condensed Matter; (United States), Journal Name: Physical Review, B: Condensed Matter; (United States) Vol. 50:19; ISSN 0163-1829; ISSN PRBMDO
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360606* -- Other Materials-- Physical Properties-- (1992-)
AMBIENT TEMPERATURE
ANNEALING
CHALCOGENIDES
CHARGE EXCHANGE
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
ELECTRON SPIN RESONANCE
ELEMENTS
FILMS
HEAT TREATMENTS
HOLES
INTERFACES
MAGNETIC RESONANCE
NONMETALS
OXIDES
OXYGEN
OXYGEN COMPOUNDS
POINT DEFECTS
RESONANCE
SEMIMETALS
SILICON
SILICON COMPOUNDS
SILICON OXIDES
SURFACE PROPERTIES
THIN FILMS
TRAPPING
VACANCIES