Microscopic nature of border traps in MOS oxides

Conference · Wed Nov 30 23:00:00 EST 1994 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)

OSTI ID:6488745

Warren, W L; Shaneyfelt, M R; Fleetwood, D M; Schwank, J R; Winokur, P S ^[1]; Devine, R A.B. ^[2]

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1. Sandia National Labs., Albuquerque, NM (United States)
2. France Telecom/CNET, Meylan (France)

The radiation hardness of MOS devices is known to degrade significantly if exposed to a high-temperature (h-t) (T > 1,000 C) inert-gas (or vacuum) post-gate-oxidation anneal during device fabrication. The authors show that enhanced hole-, electron-, interface-, and border-trap generation in irradiated Si/SiO[sub 2]/Si systems that have received in high-temperature anneal during device fabrication is related either directly, or indirectly, to the presence of anneal-created oxygen vacancies. The high-temperature anneal results are shown to be relevant to understanding defect creation in zone-melt-recrystallized silicon on insulator materials. They observe the electron paramagnetic resonance (EPR) of trap-assisted hole transfer between two different oxygen vacancy-type defects (E[prime][delta] [r arrow] E[prime][gamma] precursor) in hole injected thermal SiO[sub 2] films. Upon annealing the hole injected Si/SiO[sub 2] structures at room temperature, the E[prime][delta] center transfers its hole to a previously neutral oxygen vacancy site forming an E[prime][gamma] center. This process, also monitored electrically, shows a concomitant increase in the border-trap density that mimics the growth kinetics of the transfer-activated E[prime][gamma] centers. This suggests that both effects are correlated and that some of the transfer-created E[prime][gamma] centers are the entities responsible for the border traps in these devices. One implication of these results is that delayed defect growth processes can occur via slow trap-assisted hole motion in SiO[sub 2].

• OSTI ID: 6488745
• Report Number(s): CONF-940726--
• Journal Information: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) Vol. 41:6Pt1; ISSN 0018-9499; ISSN IETNAE
• Country of Publication: United States
• Language: English

Related Subjects

440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ANNEALING
CHALCOGENIDES
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
ELEMENTS
HARDENING
HEAT TREATMENTS
JUNCTIONS
OXIDES
OXYGEN COMPOUNDS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATION HARDENING
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMIMETALS
SILICON
SILICON COMPOUNDS
SILICON OXIDES