Electron spin resonance analysis of EP center interactions with H{sub 2}: Evidence for a localized EP center structure
- Pennsylvania State Univ., University Park, PA (United States). Dept. of Engineering Science and Mechanics
Hole traps dominate the electronic properties of amorphous SiO{sub 2} thin films. Recent studies have suggested that hole traps and H{sub 2} participate in the formation of interface traps at the Si/SiO{sub 2} boundary. These studies are consistent with the McLean proton drift model. It has been shown that there is a rough one to one correspondence between hole traps and E{prime}{sub {gamma}} centers (an oxygen vacancy related defect consisting of an unpaired electron localized on a silicon backbonded to three oxygens) in the gate oxides of gamma irradiated MOS devices and that E{prime}{sub {gamma}} centers play an important role in hole trapping in separation by implanted oxygen (SIMOX) buried oxides. It was recently demonstrated that exposure to H{sub 2} at room temperature results in the rapid transformation of E{prime}{sub {gamma}} centers into two H complexed defects. Since a build of interface traps occurred on the same time scale as the E{prime}{sub {gamma}}/H{sub 2} reactions, it was concluded that E{prime}{sub {gamma}} center hole traps play an indirect role in interface trap formation. The authors report the first observation of a hydrogen complexed EP (E{prime}{sub {delta}}) center. Analysis of EP/H and E{prime}{sub {gamma}}/H electron spin resonance spectra show that they have quite similar doublet splitting, doublet linewidth, and doublet g-shift from the center line, providing the first evidence that EP (E{prime}{sub {delta}}) centers do not have a delocalized structure.
- OSTI ID:
- 203696
- Report Number(s):
- CONF-950716--
- Journal Information:
- IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 6Pt1 Vol. 42; ISSN 0018-9499; ISSN IETNAE
- Country of Publication:
- United States
- Language:
- English
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