Excess-Si related defect centers in buried SiO[sub 2] thin films
- Sandia National Laboratories, Albuquerque, New Mexico 87185-5800 (United States)
- Centre National d'Etudes des T'el'ecommunications, 38243 Meylan Cedex (France)
Using electron paramagnetic resonance (EPR) and capacitance-voltage measurements we have investigated the role of excess-silicon related defect centers as charge traps in separation by the implantation of oxygen materials. Three types of EPR-active centers were investigated: oxygen vacancy [ital E][gamma][prime] centers (O[sub 3][equivalent to]Si[sm bullet] [sup +]Si[equivalent to]O[sub 3]), delocalized [ital E][delta][prime] centers, and [ital D] centers (Si[sub 3][equivalent to]Si[sm bullet]). It was found that all of these paramagnetic centers are created by selective hole injection, and are reasonably ascribed as positively charged when paramagnetic. These results provide the first experimental evidence for (1) the charge state of the [ital E][delta][prime] center, and (2) that the [ital D] center is an electrically active point defect in these materials.
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 6514166
- Journal Information:
- Applied Physics Letters; (United States), Journal Name: Applied Physics Letters; (United States) Vol. 62:25; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360606* -- Other Materials-- Physical Properties-- (1992-)
BATTERY CHARGE STATE
CHALCOGENIDES
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
ELECTRON SPIN RESONANCE
HOLES
MAGNETIC RESONANCE
OXIDES
OXYGEN COMPOUNDS
PHYSICAL RADIATION EFFECTS
POINT DEFECTS
RADIATION EFFECTS
RESONANCE
SILICON COMPOUNDS
SILICON OXIDES
TRAPS
VACANCIES