Hydrogen interactions with delocalized spin centers in buried SiO[sub 2] thin films
- Sandia National Laboratories, Albuquerque, New Mexico 87185-5800 (United States)
Defect centers have been investigated in bonded and etchback silicon-on-insulator materials following irradiation using electron paramagnetic resonance (EPR). Three different EPR centers are created in the top 0.1 [mu]m of the SiO[sub 2] dielectric by either x-ray irradiation or vacuum ultraviolet (VUV) illumination. Two of the defects are the classic [ital E][prime] center ([center dot]Si[equivalent to]O[sub 3]) and the amorphous silicon center ([center dot]Si[equivalent to]Si[sub 3]). The third EPR active defect center is characterized by [ital g]=2.0025 with an effective line width of 1.1 G. Longer irradiation times transform this new center into a hydrogen-related defect as observed by its two hyperfine lines split by 23.1 G. It appears that this defect is positively charged when EPR active. Using conventional capacitance versus voltage techniques, it is also found that irradiation leads to the generation of positive charge in the dielectric. This charge is located near the bottom Si/SiO[sub 2] interface, opposite the interface at which the paramagnetic centers are located.
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 6716923
- Journal Information:
- Applied Physics Letters; (United States), Journal Name: Applied Physics Letters; (United States) Vol. 62:14; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360605* -- Materials-- Radiation Effects
360606 -- Other Materials-- Physical Properties-- (1992-)
BATTERY CHARGE STATE
CHALCOGENIDES
COMPLEXES
DEFECTS
ELECTROMAGNETIC RADIATION
ELECTRON SPIN RESONANCE
ELEMENTS
HYDROGEN COMPLEXES
INTERFACES
IONIZING RADIATIONS
MAGNETIC RESONANCE
OXIDES
OXYGEN COMPOUNDS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATIONS
RESONANCE
SEMIMETALS
SILICON
SILICON COMPOUNDS
SILICON OXIDES
ULTRAVIOLET RADIATION
X RADIATION