Tungsten deposition by hydrogen-atom reaction with tungsten hexafluoride

Thesis/Dissertation · Mon Dec 31 23:00:00 EST 1990

OSTI ID:7174134

Lee, W W

Using gaseous hydrogen atoms with WF[sub 6], tungsten atoms can be produced in a gas-phase reaction. The atoms then deposit in a near-room temperature process, which results in the formation of tungsten films. The W atoms (10[sup 10]-10[sup 11]/cm[sup 3]) were measured in situ by atomic absorption spectroscopy during the CVD process. Deposited W films were characterized by Auger electron spectroscopy, Rutherford backscattering, and X-ray diffraction. The surface morphology of the deposited films and filled holes was studied using scanning electron microscopy. The deposited films were highly adherent to different substrates, such as Si, SiO[sub 2], Ti/Si, TiN/Si and Teflon. The reaction mechanism and kinetics were studied. The experimental results indicated that this method has three advantages compared to conventional CVD or PECVD: (1) film growth occurs at low temperatures; (2) deposition takes place in a plasma-free environment; and (3) a low level of impurities results in high-quality adherent films.

• Research Organization: Rensselaer Polytechnic Inst., Troy, NY (United States)
• OSTI ID: 7174134
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426000 -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
665300* -- Interactions Between Beams & Condensed Matter-- (1992-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ATOMIC BEAMS
BEAMS
CHEMICAL COATING
CHEMICAL REACTIONS
CHEMICAL VAPOR DEPOSITION
COATINGS
DEPOSITION
ELEMENTS
ENERGY BEAM DEPOSITION
FILMS
FLUORIDES
FLUORINE COMPOUNDS
HALIDES
HALOGEN COMPOUNDS
HYDROGEN
METALS
NONMETALS
REFRACTORY METAL COMPOUNDS
SURFACE COATING
THIN FILMS
TRANSITION ELEMENT COMPOUNDS
TRANSITION ELEMENTS
TUNGSTEN
TUNGSTEN COMPOUNDS
TUNGSTEN FLUORIDES
VAPOR DEPOSITED COATINGS